Magnetic-field-enhanced generation of terahertz radiation in semiconductor surfaces
Identifieur interne : 011963 ( Main/Repository ); précédent : 011962; suivant : 011964Magnetic-field-enhanced generation of terahertz radiation in semiconductor surfaces
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Abstract
A comparative study of magnetic-field-enhanced THz generation in semiconductor surfaces of InSb, InAs, InP, GaAs, and GaSb is reported. Applying an external magnetic field, the power of the generated THz radiation is increased for all examined semiconductor materials. The use of time-resolved measurements of the THz waveform allows to distinguish between the fraction of radiation originating from the surface depletion field and the fraction that is additionally generated by the magnetic field. It turns out that the power enhancement factor due to the magnetic field is inversely proportional to the effective electron mass. © 2000 American Institute of Physics.
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Wallenstein</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Fachbereich Physik, Universitaet Kaiserslautern, 67663 Kaiserslautern, Germany</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Fachbereich Physik, Universitaet Kaiserslautern, 67663 Kaiserslautern</wicri:regionArea><placeName><region type="land" nuts="2">Rhénanie-Palatinat</region><settlement type="city">Kaiserslautern</settlement></placeName></affiliation></author><author><name sortKey="Beigang, R" uniqKey="Beigang R">R. Beigang</name><affiliation wicri:level="3"><inist:fA14 i1="01"><s1>Fachbereich Physik, Universitaet Kaiserslautern, 67663 Kaiserslautern, Germany</s1><sZ>1 aut.</sZ><sZ>2 aut.</sZ><sZ>3 aut.</sZ></inist:fA14><country xml:lang="fr">Allemagne</country><wicri:regionArea>Fachbereich Physik, Universitaet Kaiserslautern, 67663 Kaiserslautern</wicri:regionArea><placeName><region type="land" nuts="2">Rhénanie-Palatinat</region><settlement type="city">Kaiserslautern</settlement></placeName></affiliation></author></titleStmt><publicationStmt><idno type="inist">00-0538669</idno><date when="2000-12-18">2000-12-18</date><idno type="stanalyst">PASCAL 00-0538669 AIP</idno><idno type="RBID">Pascal:00-0538669</idno><idno type="wicri:Area/Main/Corpus">012078</idno><idno type="wicri:Area/Main/Repository">011963</idno></publicationStmt><seriesStmt><idno type="ISSN">0003-6951</idno><title level="j" type="abbreviated">Appl. phys. lett.</title><title level="j" type="main">Applied physics letters</title></seriesStmt></fileDesc><profileDesc><textClass><keywords scheme="KwdEn" xml:lang="en"><term>Experimental study</term><term>Gallium arsenides</term><term>Gallium compounds</term><term>III-V semiconductors</term><term>Indium compounds</term><term>Magnetic field effects</term><term>Magneto-optical effects</term><term>Photoluminescence</term><term>Surface conductivity</term><term>Time resolved spectra</term></keywords><keywords scheme="Pascal" xml:lang="fr"><term>7325</term><term>8105E</term><term>7855C</term><term>7847</term><term>7820L</term><term>Etude expérimentale</term><term>Indium composé</term><term>Gallium arséniure</term><term>Gallium composé</term><term>Semiconducteur III-V</term><term>Conductivité superficielle</term><term>Effet champ magnétique</term><term>Spectre résolution temporelle</term><term>Effet magnétooptique</term><term>Photoluminescence</term></keywords></textClass></profileDesc></teiHeader><front><div type="abstract" xml:lang="en">A comparative study of magnetic-field-enhanced THz generation in semiconductor surfaces of InSb, InAs, InP, GaAs, and GaSb is reported. Applying an external magnetic field, the power of the generated THz radiation is increased for all examined semiconductor materials. The use of time-resolved measurements of the THz waveform allows to distinguish between the fraction of radiation originating from the surface depletion field and the fraction that is additionally generated by the magnetic field. 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